IBD-78-20161219
Sample number: "IBD-78-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-200mA-55 sec.-20161219"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/Si (2 cips with 100 mm^2, 1 small chip) , n-type 4H-SiC epi/ 4H-SiC (small chips), 4H-SiC/ n-type 4H-SiC epi (small chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 832 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 200 mA/ 562V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 55 sec.; Thickness: 2.7 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC (Tczero): 10.5K by PPMS; Tcmid (R=0.5R20K)= 10.8K
The critical Temp of NbN film/etched n-type 4H-SiC epi/ 4H-SiC (Tczero):
chip1: Tczero=7.4K by SDL
The critical Temp of NbN film/etched 4H-SiC/n-type 4H-SiC epi (Tczero):
chip1: Tczero=7.5K by SDL
chip2: Tczero=8.7K by PPMS