Sample number: "IBD-120-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-205mA-79 sec.-20170721"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si (10mmx10mm 6 pieces)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 754 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 205 mA/ 540-541 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 79 sec.; Thickness: 4 nm
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC : Tc(R=0)=10.61 K; Tc(R=0.5R20K)=10.88 K
The critical Temp of NbN film/etched SiC (Hall bar pattern) : Tc(R=0)= K; Tc(R=0.5R20K)= K