IBD-166(T)-20190418
Sample number: "IBD-166-20 nm AlN on NbN on 4HSiC (Ag)-900C-30/3.3sccm-2.4 mTorr-203mA-50 sec.-20190418"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ x degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 203 mA/ 543 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 50 sec.; Thickness: ~2.5 nm
Purpose: R-T of 20 nm AlN on films can be measured by bonding.
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=7.5K; Tcmid*= 8.35K (SDL)