Sample number: "IBD-189(T)-NbN on 4HSiC and 3C-SiC (Ag)-900C-30/3.3 sccm-2.6 mTorr-257 mA-191 sec.-20190715
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips), 3C-SiC (4 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 820/ 587 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 2.4-2.9 mTorr)
DC current/ volt./ Watt.: 257 mA/ 451 V/ 116 W
Pre- deposit time: 300 sec.
Deposit time: 191 sec.; Thickness:~10 nm
Purpose: Ion gating effect for Dr. Lin CH
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.4 K; Tcmid*= 12.65 K (SDL)
The critical Temp of NbN film/ 3C-SiC/Si sub.: Tc0*=13.75 K; Tcmid*= 13.88 K (SDL)