Sample number: "IBD-60-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-193mA-2107 sec.-20160811"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 736 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 193 mA/ 574-572 V/ 111-110 W
Pre- deposit time: 300 sec.
Deposit time: 2107 sec.; Thickness: 113.2 nm
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc) of NbN film/MgO: 5.14K (PPMS 20160812)
The critical Temp (Tc) of NbN film/etched SiC: 14.2K (PPMS 20160812)