Sample number: "IBD-157-NbN on 4HSiC (Ag)-900C-30/2.9sccm-2.4 mTorr-241mA-2106 sec.-20180913"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (3 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 838 degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 241 mA/ 464 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 2106 sec.; Thickness: 100 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/ undoped 4H-SiC sub.:
Tc0= 14.45 K; Tcmid= 14.7 K; Rsq20K= 41.8 ohm (PPMS_20181019)
Tc0*= 13.8 K; Tcmid*= 14 K; Rsq20K= 68 ohm (SDL_20190605)