Sample number: "IBD-90-NbN-un doped-4HSiC (Si face) (Ag)-900C-30/3.3 sccm-2.1 mTorr-201mA-650 sec.-20170503"
Background of the M.C. (Main chamber): 2.1*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/HRSi (1 cips with 5x10 mm^2), and un doped-4HSiC (Si face) (5 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 820 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 201 mA/ 555 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 650 sec.; Thickness: 34.7 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC (Tczero):
The critical Temp of NbN film/etched undoped 4H-SiC sub. (Si-face): Tczero=12.8K; Tcmid (R=0.5R20K)= 14.6K (PPMS)