Sample number: "IBD-87-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-201mA-98 sec.-20170418"
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/HRSi (3 cips with 100 mm^2), and 3C-SiC/HRSi (3 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 801 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 201 mA/ 551 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 79 sec.; Thickness: 4 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC/HRSi:
IBD-87-position05(middle side): Tczero=11.5K; Tcmid (R=0.5R20K)=11.77K (by PPMS)
IBD-87-position06(lower side)Tczero=11.2K; Tcmid (R=0.5R20K)=11.75K (by PPMS