Sample number: "IBD-154-NbN with 3nm AlN capped layer on 4HSiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-221mA-38 sec.-20180815"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (1 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 815 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 222 mA/ 504 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 38 sec.; Thickness: 1.8 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
PPMS: Tc0=4.8 K, Tcmid=5.6 K