IBD-224(T)-20210407
Sample number: "IBD-224(T)-NbN at RT-30/1.5 sccm-2.9 mTorr-365 mA-667 sec.-20210407
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: MgO, Si3N4, Si, testchip, fuse quartz, IBD-220-NbNx (with PN2=18%)/Si
Mounting: vacuum oil
Temp. of Sub. (set /after growth/ holder): 18→19 C
Ar/N2: 30 sccm/1.5 sccm
APC: set value of the APC position is 220 (the pressure shows 2.9-3.4 mTorr)
DC current/ volt./ Watt.: 365 mA/ 364 V/ 133 W
Pre- deposit time: 300 sec.
Deposit time: 667 sec.; Thickness:~ 145.8 nm
Purpose: NbN at RT
The critical Temp of NbN film: Tc0=2K of NbN on MgO