IBD-175(T)-20190529
Sample number: "IBD-175(T)-NbN on 4HSiC (Ag)-900C-30/4.9sccm-3.4 mTorr-234mA-2078 sec.-20190529
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 810/ 585 degree C
Ar/N2: 30 sccm/4.9 sccm
APC: set value of the APC position is 225 (the pressure shows 2.9-3.6 mTorr)
DC current/ volt./ Watt.: 234 mA/ 524 V/ 122-123 W
Pre- deposit time: 300 sec.
Deposit time: 2078 sec.; Thickness: ~77 nm
Purpose: various N2/(Ar+N2)= 14%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.73 K; Tcmid*= 12.85 K (SDL)