Sample number: "IBD-123-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-205mA-79 sec.-20170902" (test chip after baking the IBD)
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si (10mmx10mm 6 pieces)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 932 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 206 mA/ 537 V/ 110-111 W
Pre- deposit time: 300 sec.
Deposit time: 79 sec.; Thickness: 4 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched SiC : Tc(R=0)=12.68 K; Tc(R=0.5R20K)=13.52 K