IBD-170(T)-20190516
Sample number: "IBD-170-NbN on 4HSiC (Ag)-900C-30/1.9sccm-2.4 mTorr-231mA-813 sec.-20190516"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth of sub./ holder): 900/ 806/ 609 degree C
Ar/N2: 30 sccm/1.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 231 mA/ 492 V/ 114 W
Pre- deposit time: 300 sec.
Deposit time: 813 sec.; Thickness: ~75 nm
Purpose: various N2/(Ar+N2)=6%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=11.1 K; Tcmid*= 11.3 K (SDL)