Sample number: "IBD-95-NbN-SiC (Ag)-900C-30/3.3 sccm-2.1 mTorr-203mA-13 sec.-2017051802"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si (10mmx10mm pieces, 6 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 743 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 203 mA/ 550 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 13 sec.; Thickness: 0.44 nm (~1 u.c. of NbN; 1 unit cell of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)