Sample number: "IBD-212(T)-NbN on 3C- and 4H-SiC-900C-30/3.3 sccm-2.9 mTorr-270 mA-8 sec.-20200716
Background of the M.C. (Main chamber): 2.1*1e-8 torr
Substrate: 20"-BOE etched- 3CSiC ( 5 chips with 10x10 mm^2) and 4HSiC ( 4 chips with 10x9 mm^2)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 795/ 562 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.6-3.1 mTorr)
DC current/ volt./ Watt.: 270 mA/ 448 V/ 121 W
Pre- deposit time: 300 sec.
Deposit time: 8 sec.
Thickness: ~0.466 nm (001)-NbN, ~0.881 nm (111)-NbN
(Thickness of (001)-NbN: y=-0.038+0.063x; Thickness of (111)-NbN: y=0.297+0.073x)
Purpose: 1 unit cell NbN film for Thermometer.
The critical Temp of (001)-NbN film/ 3C-SiC/HRSi: (no Tc)
The critical Temp of (111)-NbN film/ 4H-SiC: