Sample number: "IBD-102-20 nm AlN on 3nm-NbN/3C-SiC (diffusion oil)-RT-0/33.3 sccm-2.1 mTorr-rotate (10 r.p.m.)-166 mA-729 sec.-2017061202"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: IBD-100-3 nm NbN /HRSi for HEB
Mounting: diffusion oil
Temp. of Sub. (set /after growth): RT, 49/ 44 degree C
Ar/N2: 0 sccm/33.3 sccm
APC: set value of the APC position is 0 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 166 mA/ 560 V/ 93 W
Pre- deposit time: 500 sec.
Deposit time: 729 sec.; Thickness: 20 nm
(The thickness determined by IBD93: 87.2 nm/ 3180 sec.; Deposition rate: 0.27 Å/sec.)
Tcmid(R=0.5R20K): 10.9 K