Sample number: "IBD-115-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-205mA-98 sec.-20170713"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched-undoped 4H-SiC-Si face (10mmx10mm 2 pieces, 5 mmx5mm 1 piece)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 822 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 205 mA/ 543 V/ 112-111 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: 5 nm
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched 4HSiC : Tc(R=0.5R20K)=11.75 K