NbN deposition
a. Wafer : test chip (SiO2 (600nm)/Si), SiO2 (600nm)/Si, HR Si
b. Wafer clean : no
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.3 (SCCM), 6.8 mtorr
f. Thickness: 2961.8 A, rate: 14.81 A/s = 1.48 nm/s
g. Current: 1.7A
h. Tc = 13.9 K