Sample number: "IBD-155-NbN on 4HSiC (Ag)-900C-30/2.9sccm-2.4 mTorr-225mA-376 sec.-20180816"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (3 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 815 degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 225 mA/ 497 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 376 sec.; Thickness: 27.5 nm (determined by IBD-150-HRTEM)
PPMS: Tc0=12.13 K, Tcmid=12.3 K
SDL: Tc0*=11.6 K; Tcmid*= 11.87 K