Sample number: "IBD-62-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-194mA-56 sec.-20161012"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: etched SiC/Si (20sec.)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 763 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 194 mA/ 574 V/ 111-112 W
Pre- deposit time: 300 sec.
Deposit time: 56 sec.; Thickness: 2.66 nm (~6 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC (Tczero/Tcmid): 10.58/11.75 (PPMS 20161014)