Sample number: "IBD-171-NbN on 3C- and 4HSiC (Ag)-900C-30/3.3sccm-2.4 mTorr-224mA-98 sec.-20190521"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips) and 3CSiC (4 chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth of sub./ holder): 900/ 780/ 614 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 250 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 224 mA/ 511 V/ 114 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: ~5.6 nm
Purpose: Bi/NbN by Dr. Lin