IBD-217-20210304
Sample number: "IBD-217-Nb on deep etching Si-RT-30/0 sccm-5.1 mTorr-500 mA-1800 sec.-20210304 with C.L.
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 5 min-BOE etched- deep etching Si (#T-deep RIE-20181025-up-3-2) (2 chips with 5x10 mm^2)
Mounting: vacuum oil
Temp. of Sub. (set /after growth/ holder): 17/ 32/ x degree C
Ar/N2: 30 sccm/0 sccm
APC: set value of the APC position is 175 (the pressure shows 4.8-5.3 mTorr)
DC current/ volt./ Watt.: 500-513 mA/ 625-610 V/ 311-310 W
Pre- deposit time: 300 sec.
Deposit time: 600+600+600 sec.; Thickness:~1000 nm
Purpose: step coverage by oblique gun