Sample number: "IBD-39-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.6 mTorr-186mA-20160601"
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: etched SiC/Si (20sec.), and MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 771 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 225 (the pressure shows 2.4-2.9 mTorr)
DC current/ volt./ Watt.: 186 mA/ 584 V/ 109 W
Pre- deposit time: 300 sec.
Deposit time: 68 sec.; Thickness: 3.3 nm (maybe)
(Deposit Rate: 0.487 A/s)
The critical Temp (Tc) of NbN film/MgO: 12.42 K/ 11.8K (PPMS 20160622)
The critical Temp (Tc) of NbN film/etched SiC: 11.3 K/ 10.27K (PPMS 20160622)