IBD-163-20190102-AlN 20 nm

IBD-163-20190102-AlN 20 nm

Sample number: "IBD-163-AlN on IBD-119-4nm NbN/3C-SiC (diffusion oil)-RT-0/33.3 sccm-2.1 mTorr-rotate (10 r.p.m.)-170 mA-729 sec.-20190102"

Background of the M.C. (Main chamber): 3.2*1e-8 torr

Substrate: multidirection of IBD-119-4nm NbN on 3C-SiC

Mounting: diffusion oil

Temp. of Sub. (set /after growth): RT, 17/18/19 degree C

Ar/N2: 0 sccm/33.3 sccm

APC: set value of the APC position is 140 (the pressure shows 1.9-2.4 mTorr)

DC current/ volt./ Watt.: 170 mA/ 548 V/ 93 W

Pre- deposit time: 500 sec.

Deposit time: 729 sec.; Thickness: 20 nm

(The thickness determined by IBD93: 87.2 nm/ 3180 sec.; Deposition rate: 0.27 Å/sec.)