Sample number: "IBD-219(T)-NbN at RT-30/4.1 sccm-2.9 mTorr-275 mA-300 sec.-20210307
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: MgO, Si3N4, Si, testchip
Mounting: vacuum oil
Temp. of Sub. (set /after growth/ holder): 18→19 C
Ar/N2: 30 sccm/4.1 sccm
APC: set value of the APC position is 230 (the pressure shows 2.6-3.4 mTorr)
DC current/ volt./ Watt.: 275 mA/ 457 V/ 125 W
Pre- deposit time: 300 sec.
Deposit time: 300 sec.; Thickness:~45.7 nm
Purpose: NbN at RT
The critical Temp of NbN film: no Tc (insulating)