Sample number: "IBD-44-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-188mA-40sec.-20160706"
Background of the M.C. (Main chamber): 1.7*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 790 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 188 mA/ 583 V/ 109-110 W
Pre- deposit time: 300 sec.
Deposit time: 40 sec.; Thickness: 1.9 nm (maybe)
(Deposit Rate: 0.487 A/s)
The critical Temp (Tc) of NbN film/MgO:
The critical Temp (Tc) of NbN film/etched SiC: 8.1 K (20160707)/ 6.6 (PPMS 20160715)/ 6.2 (PPMS 20160722)