Sample number: "IBD-156-NbN on 4HSiC (Ag)-900C-30/2.9sccm-2.4 mTorr-241mA-1053 sec.-20180823"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (3 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 802 degree C
Ar/N2: 30 sccm/2.9 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 241 mA/ 465 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 1053 sec.; Thickness: 50 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
PPMS: Tc0=13.4 K, Tcmid=13.7 K
SDL: Tc0*=13.1 K; Tcmid*= 13.3 K