Sample number: "IBD-220(T)-NbN at RT-30/6.8 sccm-3.1 mTorr-265 mA-350 sec.-20210318
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: MgO, Si3N4, Si, testchip
Mounting: vacuum oil
Temp. of Sub. (set /after growth/ holder): 17→18 C
Ar/N2: 30 sccm/6.8 sccm
APC: set value of the APC position is 230 (the pressure shows 2.9-3.6 mTorr)
DC current/ volt./ Watt.: 265 mA/ 488 V/ 129 W
Pre- deposit time: 300 sec.
Deposit time: 350 sec.; Thickness:
Purpose: NbN at RT
The critical Temp of NbN film: no Tc (insulating)