Run #330 NbN deposition
a. Wafer : HRSi
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.3 (SCCM), 7.4 mtorr
f. Thickness: 133 A (10 sec.); Deposit Rate: 13.3 A/s
g. Current: 1.7 A
h. Tc= 9.44 K