Sample number: "IBD-210(T)-NbN on 3C- and 4H-SiC-900C-30/3.3 sccm-2.9 mTorr-270 mA-118 sec.-20200226
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 3CSiC ( 5 chips with 10x10 mm^2) and 4HSiC ( 4 chips with 10x9 mm^2)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 770/ 555 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.4-3.1 mTorr)
DC current/ volt./ Watt.: 270 mA/ 450 V/ 122 W
Pre- deposit time: 300 sec.
Deposit time: 118 sec.; Thickness:~6 nm
Purpose: d, Tc, R, Jc of (001)-/ twined (111)-NbN
The critical Temp of NbN film/ undoped 3C-SiC sub.:
The critical Temp of NbN film/ undoped 4H-SiC sub.: