Sample number: "IBD-190(T)-NbN on 4HSiC-900C-30/3.3 sccm-2.9 mTorr-260 mA-42 sec.-20190923
Background of the M.C. (Main chamber): 3*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 830/ 575 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 2.6-3.1 mTorr)
DC current/ volt./ Watt.: 260 mA/ 447 V/ 116 W
Pre- deposit time: 300 sec.
Deposit time: 42 sec.; Thickness:~2.4 nm
Purpose: Ion gating effect for Dr. Lin CH
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*= 6 K; Tcmid*= 6.5 K (SDL)