Run #365 NbN deposition
a. Wafer : SiO2/ test chip
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.1 (SCCM), 7.4 mtorr
f. Thickness: 2410 A (200 sec.); Deposit Rate: 12.05 A/s
g. Current: 1.5 A
h. Tc: