IBD-159-20181127
Sample number: "IBD-159-NbN on 3C- 4H-SiC (Ag)-900C-30/3.3sccm-2.4 mTorr-239mA-98 sec.-20181127"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (6 big chips), 3CSiC (3 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 750 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 239 mA/ 468 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: 5.6 nm
Purpose: Bi+NbN for MBE