Run #376 NbN deposition
Wafer : SiO2/ test chip
Mounting : with diffusion pump oil
RF-clean : Yes, only N2
Temp. of Sub.: RT
Ar/N2: 12 sccm/3.3 sccm; 7.4 mtorr
DC current/ volt./ Watt.: 1.75 A/346 V/ 0.6 W
Pre- deposit time: 300 sec.
Deposit time: 200 sec.
Thickness: 2952.6 A (200 sec.); Deposit Rate: 14.76 A/s