IBD-80-20170112
Sample number: "IBD-80-NbN-SiC (Ag)-900C-30/3.3 sccm-2.4 mTorr-200mA-98 sec.-20170112"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/Si (1 small chip) , n-type 4H-SiC epi/ 4H-SiC (small chips), 4H-SiC/ n-type 4H-SiC epi (small chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 848 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 200 mA/ 559 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 98 sec.; Thickness: 5 nm
(The thickness determined by HRTEM of IBD-41 and IBD-67: y (nm)=(-0.25985)+0.05385x(sec.) )
The critical Temp of NbN film/etched 3C-SiC: Tcmid(B=0T)=12.35K; Tcmid(B=0.5T)=11.88K; Tcmid(B=1T)=11.575K (the normal state: 20K) by PPMS
The critical Temp of NbN film/etched n-type 4H-SiC epi/ 4H-SiC sub.:
chip1: Tczero=9.8K (by PPMS)
chip2: Tczero=10.4K (by PPMS)
The critical Temp of NbN film/etched 4H-SiC sub./n-type 4H-SiC epi:
chip1: Tczero=10.3 (by PPMS)
chip1: Tczero=10.5 (by PPMS)