Run #354 NbN deposition
a. Wafer : SiO2/testchip
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.2 (SCCM), 7.4 mtorr
f. Thickness:3057.8 A (10 sec.); Deposit Rate: 15.289 A/s
g. Current: 1.7 A
h. Tc= 14.2 K