Sample number: "IBD-94-NbN-SiC (Ag)-900C-30/3.3 sccm-2.1 mTorr-203mA-21 sec.-2017051801"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si (10mmx10mm 3 pieces, 1 small chip)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 788 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 240 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 203 mA/ 547 V/ 111-112 W
Pre- deposit time: 300 sec.
Deposit time: 21 sec.; Thickness: 0.871 nm (~2 u.c. of NbN; 1 unit cell of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC (Tc, R=0.9R20K): 2.2K