IBD-97-20170605
Sample number: "IBD-97-NbN-SiC (Ag)-900C-30/3.3 sccm-1.9 mTorr-203mA-55 sec.-20170605"
Background of the M.C. (Main chamber): 3.6*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si (5mmx10mm 1 small pieces)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 840 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 245 (the pressure shows 1.7-2.1 mTorr)
DC current/ volt./ Watt.: 203 mA/ 554 V/ 112-113 W
Pre- deposit time: 300 sec.
Deposit time: 55 sec.; Thickness: 2.7 nm
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC : Tczero=10.2K; Tc(R=0.5R20K)=11.75K