Sample number: "IBD-45-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-189mA-45sec.-20160713"
Background of the M.C. (Main chamber): 3.1*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 793 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 189 mA/ 584 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 46 sec.; Thickness: 2.19 nm (~5 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
note: After 30 sec.-growth, start to rotate the substrate.
The critical Temp (Tc) of NbN film/MgO: / 8.15 (20160715 PPMS)
The critical Temp (Tc) of NbN film/etched SiC: 10.55 (20160714)/ 10.25 (20160715 PPMS)/ 8.63 (20160722 PPMS)