Sample number: "IBD-179(T)-NbN on 4HSiC (Ag)-900C-30/20 sccm-4.3 mTorr-232 mA-7200 sec.-20190610
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 778/ 570 degree C
Ar/N2: 30 sccm/20 sccm
APC: set value of the APC position is 255 (the pressure shows 3.9-4.6 mTorr)
DC current/ volt./ Watt.: 232 mA/ 549-547 V/ 127 W
Pre- deposit time: 300 sec.
Deposit time: 7200 sec.; Thickness:
Purpose: various N2/(N2+Ar)= 40 %
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=10.35 K; Tcmid*= 10.55 K (SDL)