IBD-88-20170425
Sample number: "IBD-88-AlN-3C-SiC (diffusion oil)-RT(20 C)-N2 33.3 sccm-2.1 mTorr-164mA-1200 sec.-20170425"
Background of the M.C. (Main chamber): 2.5*1e-8 torr
Substrate: 20"-BOE etched- 3C-SiC/HRSi, and testchips
Mounting: difussion oil
Temp. of Sub. (set /after growth): 20/ 24 degree C
Ar/N2: 0 sccm/33.3 sccm
APC: set value of the APC position is 130 (the pressure shows 1.9-2.4 mTorr)
DC current/ volt./ Watt.: 164 mA/ 563 V/ 93 W
Pre- deposit time: 300 sec.
Deposit time: 1200 sec.; Thickness: 50 nm
(The thickness determined by alpha-step: 2.5 nm/min)