Sample number: "IBD-193(T)-NbN on 3C- and 4H-SiC-900C-30/3.3 sccm-2.9 mTorr-263 mA-587 sec.-20190926
Background of the M.C. (Main chamber): 3*1e-8 torr
Substrate: 20"-BOE etched- 3CSiC ( 3 chips with 10x10 mm^2) and 4HSiC ( 3 chips with 10x10 mm^2)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 869/ 568 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 230 (the pressure shows 2.6-3.1 mTorr)
DC current/ volt./ Watt.: 263 mA/ 448 V/ 117 W
Pre- deposit time: 300 sec.
Deposit time: 587 sec.; Thickness:~30 nm
Purpose: 30 nm delta-NbN for Raman spectrum
The critical Temp of NbN film/ undoped 3C-SiC sub.:
The critical Temp of NbN film/ undoped 4H-SiC sub.: