IBD-228(T)-20210902

Sample number: "IBD-228(T)-NbN-3C-SiC (Ag)-900C-30/3.3 sccm-2.6 mTorr-285mA-64 sec.-20210902"

Background of the M.C. (Main chamber): 2.4*1e-8 torr

Substrate: 20"-BOE etched-3C-SiC/Si (10mmx10mm, 9 pieces)

Mounting: Silver glue

Temp. of Sub. (set /after growth): 900/ 760 degree C

Ar/N2: 30 sccm/3.3 sccm

APC: set value of the APC position is 230 (the pressure shows 2.4-3.1 mTorr)

DC current/ volt./ Watt.: 285 mA/ 423 V/ 120 W

Pre- deposit time: 300 sec.

Deposit time: 64 sec.; Thickness: 4 nm

(Deposite rate of IBD-206 determined by HRTEM is 0.062 nm/sec)

The critical Temp of NbN film/etched SiC (Tcmid): 11.7 K