Sample number: "IBD-83-NbN/3C-SiC/Si-900C-30/3.3 sccm-2.4 mTorr-201mA-65 sec.-20170216"
Background of the M.C. (Main chamber): 3.3*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si
Mounting: Silver glue
Temp. of Sub. (set /after growth): 940/ 844 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 201 mA/ 556 V/ 112 W
Pre- deposit time: 300 sec.
Deposit time: 65 sec.; Thickness: 3.2 nm (~12 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched 3C-SiC/Si: Tczero=10.1K; Tcmid=11.2K (by PPMS)