Run #344 NbN deposition
a. Wafer :SiO2/ testchip
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3 (SCCM), 7.4 mtorr
f. Thickness: 3060 A; Deposit rate: 15.304 A/sec.
g. Current: 1.65 A
h. Tc=13.05 K