Run #331 NbN deposition
a. Wafer :SiO2/testchip
b. Wafer clean : no
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.3 (SCCM), 7.4 mtorr
f. Thickness:2640 A, rate: 13.2 A/s = 1.32 nm/s
g. Current: 1.7A
h. Tc = 13.2K