Sample number: "IBD-46-NbN-SiC & MgO (Ag)-900C-30/3.3 sccm-2.4 mTorr-189mA-55sec.-20160714"
Background of the M.C. (Main chamber): 2.9*1e-8 torr
Substrate: etched SiC/Si (20sec.), MgO (new)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 770 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 189 mA/ 582 V/ 110 W
Pre- deposit time: 300 sec.
Deposit time: 55 sec.; Thickness: 2.61 nm (~6 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp (Tc mid) of NbN film/MgO: 12.1K (20160722 PPMS)
The critical Temp (Tc mid) of NbN film/etched SiC: 11.8K (20160722)/ 11.7K (20160902 PPMS)/ 11.7K (20160923 PPMS)/ 11.6K (20161118 PPMS)/ no superconductivity (20170316 PPMS)