Run #355 NbN deposition
a. Wafer : SiO2/testchip
b. Wafer clean : No
c. Mounting : with diffusion pump oil
d. RF-clean : Yes, only N2
e. Working gas: Ar : 12 / N2 : 3.2 (SCCM), 7.4 mtorr
f. Thickness: 3648 A (10 sec.); Deposit Rate: 18.24 A/s
g. Current: 1.75 A
h. Tc= 11.52 K