Sample number: "IBD-65-NbN-SiC(Ag)-900C-30/3.3 sccm-2.4 mTorr-195mA-46 sec.-20161024"
Background of the M.C. (Main chamber): 2.4*1e-8 torr
Substrate: 20"-BOE etched-3C-SiC/Si (10mmx10mm, 3 pieces)
Mounting: Silver glue
Temp. of Sub. (set /after growth): 900/ 760 degree C
Ar/N2: 30 sccm/3.3 sccm
APC: set value of the APC position is 235 (the pressure shows 2.1-2.6 mTorr)
DC current/ volt./ Watt.: 195 mA/ 570 V/ 111 W
Pre- deposit time: 300 sec.
Deposit time: 46 sec.; Thickness: 2.2 nm (~5 ML of NbN; 1ML of NbN is 0.439 nm)
(Deposite rate of IBD-41 determined by HRTEM is 0.475 nm/sec)
The critical Temp of NbN film/etched SiC (Tczero/Tcmid): 8.8K/9.96K