Sample number: "IBD-178(T)-NbN on 4HSiC (Ag)-900C-30/10 sccm-3.9 mTorr-237 mA-7200 sec.-20190606
Background of the M.C. (Main chamber): 2.8*1e-8 torr
Substrate: 20"-BOE etched- 4HSiC (5 big chips)
Mounting: Silver glue
Temp. of Sub. (set /after growth/ holder): 900/ 790/ 577 degree C
Ar/N2: 30 sccm/10 sccm
APC: set value of the APC position is 230 (the pressure shows 3.6-4.1 mTorr)
DC current/ volt./ Watt.: 237 mA/ 541-537 V/ 128-127 W
Pre- deposit time: 300 sec.
Deposit time: 7200 sec.; Thickness:
Purpose: various N2/(N2+Ar)= 25%
The critical Temp of NbN film/ undoped 4H-SiC sub.: Tc0*=12.2 K; Tcmid*= 12.35 K (SDL)